GM72V66841CT_CLT Ver la hoja de datos (PDF) - LG

Número de pieza

componentes Descripción

Fabricante

GM72V66841CT_CLT

2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

LG 

LG Semicon

Auto Precharge

Read with auto-Precharge: In this operation,

since Precharge is automatically performed after

completing a read operation, a Precharge

command need not be executed after each read

operation.

GM72V66841CT/CLT

The command executed for the same bank after

the execution of this command must be the bank

active (ACTV) command. In addition, an interval

defined by lAPR is required before execution of the

next command.

CAS Latency

3

2

Precharge start cycle

2 cycle before the final data is output

1 cycle before the final data is output

Burst Read with Auto-Precharge

CLK

CL=2

Command

READ

ACTV

Dout

CL=3

Command

READ

out 0

out 1

out 2

out 3

lAPR

ACTV

Dout

out 0

out 1

out 2

out 3

lAPR

Note : Internal auto-Precharge starts at the timing indicated by " "

At CLK=50MHz (lAPR changes depending on the operating frequency.)

20

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