74LVC38A Ver la hoja de datos (PDF) - Philips Electronics
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74LVC38A Datasheet PDF : 14 Pages
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Philips Semiconductors
Quad 2-input NAND gate (open drain)
Product specification
74LVC38A
handbook, halfpage
A
B
Y
GND
MNA699
Fig.5 Logic diagram (one gate).
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
supply voltage
VI
VO
Tamb
tr, tf
input voltage
output voltage
operating ambient temperature
input rise and fall times
CONDITIONS
MIN.
for maximum speed performance 2.7
for low-voltage applications
1.2
0
0
−40
VCC = 1.2 to 2.7 V
0
VCC = 2.7 to 3.6 V
0
MAX.
3.6
3.6
5.5
5.5
+125
20
10
UNIT
V
V
V
V
°C
ns/V
ns/V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
VCC
IIK
VI
IOK
VO
IO
ICC, IGND
Tstg
Ptot
supply voltage
input diode current
input voltage
output diode current
output voltage
output sink current
VCC or GND current
storage temperature
power dissipation
CONDITIONS
VI < 0
note 1
VO < 0
note 1
VO = 0 to VCC
Tamb = −40 to +125 °C; note 2
MIN.
−0.5
−
−0.5
−
−0.5
−
−
−65
−
MAX.
+6.5
−50
+6.5
−50
+6.5
50
±100
+150
500
UNIT
V
mA
V
mA
V
mA
mA
°C
mW
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO14 packages: above 70 °C derate linearly with 8 mW/K.
For (T)SSOP14 packages: above 60 °C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K.
2004 Mar 22
5
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