FQT4N20 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FQT4N20 Datasheet PDF : 8 Pages
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Typical Characteristics
V
Top :
15GVS
10 V
8.0 V
7.0 V
6.5 V
100
6.0 V
Bottom : 5.5 V
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
7
6
5
V = 10V
GS
4
V = 20V
GS
3
2
1
0
0
2
4
6
8
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
300
250
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
200
C
oss
150
100
※ Notes :
1. VGS = 0 V
C
2. f = 1 MHz
rss
50
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
100
150℃
10-1
2
25℃
-55℃
※ Notes :
1.
2.
2V5DS0μ=s40PVulse
Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10-1
0.2
150℃ 25℃
※ Notes :
1.
2.
2V5GS0μ=s40PVulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 40V
DS
10
V = 100V
DS
VDS = 160V
8
6
4
2
※ Note : ID = 3.6 A
0
0
1
2
3
4
5
6
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, May 2001
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