3SK240 Ver la hoja de datos (PDF) - Toshiba

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componentes Descripción

Fabricante

3SK240

GaAs N-Channel Dual Gate MES Type Field Effect Transistor

Toshiba 

TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type

3SK240

3SK240

TV Tuner, UHF RF Amplifier Applications

Unit: mm

Maximum Ratings (Ta = 25°C)

Characteristics

Gate 1-drain voltage

Gate 2-drain voltage

Gate 1-source voltage

Gate 2-source voltage

Gate 1 current

Gate 2 current

Power dissipation

Channel temperature

Storage temperature range

Symbol

VG1D0

VG2D0

VG1S

VG2S

IG1

IG2

PD

Tch

Tstg

Rating

Unit

-9

V

-9

V

-4

V

-4

V

1

mA

1

mA

150

mW

125

°C

-55~125

°C

Electrical Characteristics (Ta = 25°C)

JEDEC

―

JEITA

―

TOSHIBA

2-3J1A

Weight: 0.013 g (typ.)

Characteristics

Gate 1 leakage current

Gate 2 leakage current

Drain current

Gate 1-source cut-off voltage

Gate 2-source cut-off voltage

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Power gain

Noise figure

Symbol

Test Condition

IG1SS

IG2SS

IDSS

VG1S (OFF)

VG2S (OFF)

ïYfsï

Ciss

Crss

Gps

NF

VDS = 0, VG1S = -3 V, VG2S = 0

VDS = 0, VG1S = 0, VG2S = -3 V

VDS = 3 V, VG1S = 0, VG2S = 0

VDS = 3 V, VG2S = 0, ID = 100 mA

VDS = 3 V, VG1S = 0, ID = 100 mA

VDS = 3 V, VG2S = 1 V, ID = 5 mA

f = 1 kHz

VDS = 3 V, VG2S = 1 V, ID = 5 mA

f = 1 kHz

VDS = 3 V, VG2S = 1 V, ID = 5 mA

f = 800 MHz (Figure 1)

Min Typ. Max Unit

¾

¾

-4

mA

¾

¾

-4

mA

6

¾

20

mA

-0.7

¾ -1.8

V

-0.7

¾ -1.8

V

¾

19

¾

mS

¾

0.6 1.4

pF

¾ 0.013 0.030 pF

17 20.5 ¾

dB

¾

1.0 2.0

dB

1

2003-03-27

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