3SK225 Ver la hoja de datos (PDF) - Toshiba
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componentes Descripción
Fabricante
3SK225 Datasheet PDF : 6 Pages
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3SK225
TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type
3SK225
TV Tuner, VHF RF Amplifier Applications
FM Tuner Applications
TV Tuner, UHF RF Amplifier Applications
Unit: mm
· Superior cross modulation performance.
· Low noise figure: NF = 2.0dB (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate 1-source voltage
Gate 2-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
VDS
VG1S
VG2S
ID
PD
Tch
Tstg
Rating
Unit
13.5
V
±8
V
±8
V
30
mA
150
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-3J1A
Weight: 0.013 g (typ.)
Characteristics
Gate 1 leakage current
Gate 2 leakage current
Drain-source voltage
Drain current
Gate 1-source cut-off voltage
Gate 2-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
Test Condition
Min Typ. Max Unit
IG1SS
VDS = 0, VG1S = ±6 V, VG2S = 0
¾
¾
±50
nA
IG2SS
VDS = 0, VG1S = 0, VG2S = ±6 V
¾
¾
±50
nA
V (BR) DSX VG1S = -4 V, VG2S = -4 V, ID = 100 mA 13.5
¾
¾
V
IDSS
VDS = 6 V, VG1S = 0, VG2S = 4.5 V
0
¾
0.1 mA
VG1S (OFF) VDS = 6 V, VG2S = 4.5 V, ID = 100 mA
0
¾
1.0
V
VG2S (OFF) VDS = 6 V, VG1S = 4 V, ID = 100 mA
0.5
1.0
1.5
V
ïYfsï
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA,
f = 1 kHz
¾
21
¾
mS
Ciss
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA,
¾
3.4
4.4
pF
Crss
f = 1 MHz
¾ 0.020 0.05 pF
Gps
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA,
19
22
¾
dB
NF
f = 500 MHz (Figure 1)
¾
2.0 3.5
dB
1
2003-04-04
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