SST29EE010-200-4C-WN Ver la hoja de datos (PDF) - Silicon Storage Technology

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SST29EE010-200-4C-WN

1 Mbit (128K x8) Page-Write EEPROM

Silicon Storage Technology 

1 Mbit Page-Write EEPROM

SST29EE010 / SST29VE010

Data Sheet

TABLE 13: REVISION HISTORY

Revision

07 • 2002 Data Book

Description

08 • Removed 200 ns Read Access Time for SST29LE010

• Clarified IDD Write to be Program and Erase in Tables 5 and 6 on page 9

09 • 2004 Data Book

• Added non-Pb MPNs and removed footnote (See page 25)

10 • Added 150 ns MPNs for SST29VE010

11 • Removed 3V device and associated MPNs: refer to EOL Product Data Sheet

S71061(01)

• Added non-Pb MPN for SST29EE010 PDIP

• Added RoHS compliance information on page 1 and in the

“Product Ordering Information” on page 24

• Updated the solder reflow temperature to the “Absolute Maximum Stress Ratings” on

page 8.

Date

May 2002

Mar 2003

Nov 2003

Mar 2004

Sep 2005

Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036

www.SuperFlash.com or www.sst.com

©2005 Silicon Storage Technology, Inc.

30

S71061-11-000

9/05

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