SST29EE010-200-4C-UN Ver la hoja de datos (PDF) - Silicon Storage Technology

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Fabricante

SST29EE010-200-4C-UN

1 Mbit (128K x8) Page-Write EEPROM

Silicon Storage Technology 

Data Sheet

PRODUCT ORDERING INFORMATION

1 Mbit Page-Write EEPROM

SST29EE010 / SST29VE010

SST 29 xE 010 - 70 - 4C - NH

XX XX XXXX - XXX - XX - XXX

E

X

Environmental Attribute

E1 = non-Pb

Package Modifier

H = 32 leads or pins

Package Type

N = PLCC

E = TSOP (type 1, die up, 8mm x 20mm)

P = PDIP

W = TSOP (type 1, die up, 8mm x 14mm)

Temperature Range

C = Commercial = 0°C to +70°C

I = Industrial = -40°C to +85°C

Minimum Endurance

4 = 10,000 cycles

Read Access Speed

200 = 200 ns

150 = 150 ns

90 = 90 ns

70 = 70 ns

Device Density

010 = 1 Mbit

Function

E = Page-Write

Voltage

E = 4.5-5.5V

V = 2.7-3.6V

Product Series

29 = Page-Write Flash

1. Environmental suffix “E” denotes non-Pb solder.

SST non-Pb solder devices are “RoHS Compliant”.

©2005 Silicon Storage Technology, Inc.

24

S71061-11-000

9/05

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