30N06-TA3-R Ver la hoja de datos (PDF) - Unisonic Technologies
Número de pieza
componentes Descripción
Fabricante
30N06-TA3-R Datasheet PDF : 8 Pages
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30N06
TYPICAL CHARACTERISTICS
On-State Characteristics
V GS
Top: 15V
10 V
8V
102
7V
6V
5 .5V
5V
Bottorm : 4.5V
101
4.5V
100
10-1
100
101
Drain-Source Voltage, VDS (V)
MOSFET
Transfer Characteristics
102
101
100
2
Note:
1. VDS=25V
2. 20µs Pulse Test
3 4 5 6 7 8 9 10
Gate-Source Voltage, VGS (V)
On-Resistance Variation vs. Drain Current and
Gate Voltage
100
80
60
VGS=10V
40
VGS=20V
20
0.0
0 20 40 60 80 100 120
Drain Current, ID (A)
Reverse Drain Current vs. Allowable Case
Temperature
102
150℃
101
25℃
100
0.2
*Note:
1. VGS=0V
2. 250µs Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
2000
1500
1000
Capacitance Characteristics
(Non-Repetitive)
Coss
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds +Cgd
Crss=Cgd
*Note:
1. VGS=0V
Ciss
2. f = 1MHz
500
Crss
0
0.1
1
10
Drain-Source Voltage, VDC (V)
Gate Charge Characteristics
12
10
VDS=30V
8
VDS=48V
6
4
2
*Note: ID=30A
0
0
5 10 15 20 25
Total Gate Charge, QG (nC)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-087,A
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