2SK2796S Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SK2796S

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2796(L), 2SK2796(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 60

Gate to source breakdown voltage V(BR)GSS ±20

Zero gate voltege drain current

I DSS

—

Gate to source leak current

I GSS

—

Gate to source cutoff voltage

VGS(off)

1.0

Static drain to source on state

resistance

RDS(on)

—

Static drain to source on state

resistance

RDS(on)

—

Forward transfer admittance

Input capacitance

|yfs|

2.5

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance

Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body–drain diode forward voltage VDF

—

Body–drain diode reverse

recovery time

t rr

—

Note: 4. Pulse test

Typ

—

—

—

—

—

0.12

Max

—

—

10

±10

2.0

0.16

Unit

V

V

µA

µA

V

Ω

Test Conditions

ID = 10mA, VGS = 0

IG = ±100µA, VDS = 0

VDS = 60 V, VGS = 0

VGS = ±16V, VDS = 0

ID = 1mA, VDS = 10V

ID = 3 A, VGS = 10V Note4

0.16 0.25 Ω

ID = 3A, VGS = 4V Note4

4.0 —

180 —

90

—

30

—

9

—

25

—

35

—

55

—

1.0 —

40

—

S

ID = 3A, VDS = 10V Note4

pF

VDS = 10V

pF

VGS = 0

pF

f = 1MHz

ns

VGS = 10V, ID = 3A

ns

RL = 10Ω

ns

ns

V

IF = 5A, VGS = 0

ns

IF = 5A, VGS = 0

diF/ dt =50A/µs

3

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