2SK2796S Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SK2796S Datasheet PDF : 10 Pages
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2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 0.12Ω typ.
• 4V gate drive devices.
• High speed switching
Outline
DPAK |1
D
G
S
ADE-208-534C (Z)
4th. Edition
Jun 1998
4
4
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain
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