2SK2941 Ver la hoja de datos (PDF) - NEC => Renesas Technology
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2SK2941 Datasheet PDF : 8 Pages
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2SK2941
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
Drain to Source On-State
Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBLO
RDS(on)1
RDS(on)2
VGS(off)
I yfs I
IDDS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tr
QG
QGS
QGD
VF(S-D)
trr
Qrr
MIN.
1.0
8.0
TYP.
14
22
1.5
25
1250
900
460
40
430
160
220
50
4.5
21
1.0
65
90
MAX.
20
33
2.0
10
±10
UNIT
mΩ
mΩ
V
S
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CONDITION
VGS = 10 V, ID = 18 A
VGS = 4 V, ID = 18 A
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 18 A
VDS = 30 V, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 10 V, VGS = 0, f =1 MHz
ID = 18 A, VGS(on) = 10 V
VDD = 15 V, RG = 10 Ω
ID = 35 A, VDD = 24 V,
VGS = 10 V
IF = 35 A, VGS = 0
IF = 35 A, VGS = 0,
di/dt = 100 A/µs
Test Circuit 1 Switching Time
Test Circuit 2 Gate Charge
D.U.T.
RG
PG
RG = 10 Ω
VGS
0
t
t = 1 µs
Duty Cycle ≤ 1 %
RL
VDD
VGS
Wave Form
VGS
0 10 %
ID
90 %
ID
Wave Form
0 10 %
td(on)
VGS(on) 90 %
90 %
ID
10 %
tr td(off)
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG
50 Ω
VDD
2
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