2SK2225
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
Unit
1500
V
±20
V
2
A
7
A
2
A
50
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
1500
Gate to source leak current IGSS
—
Zero gate voltage drain current IDSS
—
Gate to source cutoff voltage VGS(off)
2.0
Static drain to source on state RDS(on)
—
resistance
Forward transfer admittance |yfs|
0.45
Typ
—
—
—
—
9
0.75
Max
—
±1
500
4.0
12
—
Input capacitance
Ciss
—
Output capacitance
Coss —
Reverse transfer capacitance Crss
—
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body to drain diode forward VDF
—
voltage
Body to drain diode reverse trr
—
recovery time
Note 1. Pulse Test
990 —
125 —
60
—
17
—
50
—
150 —
50
—
0.9
—
1750 —
Unit
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS =1200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 1 A
VGS = 15 V*1
ID = 1 A
VDS = 20 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 1 A
VGS = 10 V
RL = 30 Ω
IF = 2 A, VGS = 0
IF = 20 A, VGS = 0,
diF / dt = 100 A / µs
2