APM9935(2003) Ver la hoja de datos (PDF) - Anpec Electronics

Número de pieza

componentes Descripción

Fabricante

APM9935
(Rev.:2003)

Dual P-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM9935

Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)

Symbol

Parameter

PD Maximum Power Dissipation

TA=25°C

TA=100°C

TJ Maximum Junction Temperature

TSTG

RθJA*

Storage Temperature Range

Thermal Resistance – Junction to Ambient

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Rating

2.5

1.0

150

-55 to 150

50

Unit

W

°C

°C

°C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol

Param eter

Test Condition

Static

BVDSS Drain-Source Breakdown Voltage VGS=0V , IDS=-250µA

IDSS

V G S (th)

Zero Gate Voltage Drain Current

Gate Threshold Voltage

VDS=-16V , VGS=0V

VDS=VGS , IDS=-250µA

IGSS Gate Leakage Current

VGS=±12V , VDS=0V

R

D

S

(O

N

=

)

Drain-Source On-state Resistance

VSD= Diode Forward Voltage

D yn am ic>

Q g Total G ate C harge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

td(ON) Turn-on Delay Tim e

Tr Turn-on Rise Tim e

td(OFF) Turn-off Delay Tim e

Tf Turn-off Fall Tim e

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

VGS=-4.5V , IDS=-6A

VGS=-2.5V , IDS=-5A

IS=-2A , VGS=0V

VDS=-4V , IDS=-6A

VGS=-4.5V

VDD=-4V , IDS=-6A ,

VGEN=-4.5V , RG=10Ω

VGS=0V , VDS=-15V

F re q u e n c y=1 .0 M H z





Notes

a

:

Pulse

test

;

pulse

width

≤300µs,

duty

cycle

≤

2%

b : Guaranteed by design, not subject to production testing

APM 9935

Unit

M in. Typ. M ax.

-20

V

-1 ìA

-0.5 -0.7 -1

V

±100 nA

45

mΩ

65

-0.7 -1.3 V

17 22

4.1

nC

1.6

23 45

45 80

ns

45 90

32 55

1242

341

pF

217

Copyright  ANPEC Electronics Corp.

2

Rev. A.1 - Aug., 2003

www.anpec.com.tw

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