2SJ555 Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SJ555 Datasheet PDF : 8 Pages
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2SJ555
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
RDS (on) = 0.017 Ω typ.
• Low drive current.
• 4 V gate drive devices.
• High speed switching.
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1
2
3
G
S
REJ03G0902-0300
(Previous: ADE-208-634A)
Rev.3.00
Sep 07, 2005
1. Gate
2. Drain (Flange)
3. Source
Rev.3.00 Sep 07, 2005 page 1 of 7
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