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Fabricante

2SJ412

Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)

Toshiba 

2SJ412

rth – tw

3

1

Duty = 0.5

0.5

0.3 0.2

0.1

0.1

0.05

0.05 0.02

0.03

0.01

0.01

10 μ

Single pulse

100 μ

PDM

t

T

Duty = t/T

Rth (ch-c) = 2.08°C/W

1m

10 m

100 m

1

10

Pulse width tw (s)

Safe Operating Area

−300

−100

−50

−30

IC max (pulsed)*

ID max (continuous)

−10

−5

DC operation

−3

Tc = 25°C

100 μs*

1 ms*

10 ms*

−1

*: Single nonrepetitive pulse

−0.5 Tc = 25°C

−0.3 Curves must be derated

linearly with increase in

temperature.

−0.1

−0.3

−1

−3

−10

VDSS max

−30

−100

Drain-source voltage VDS (V)

−300

EAS – Tch

500

400

300

200

100

0

25

50

75

100

125

150

Channel temperature Tch (°C)

15 V

−15 V

BVDSS

IAR

VDD

VDS

TEST CIRCUIT

RG = 25 Ω

VDD = −25 V, L = 1.84 mH

WAVE FORM

ΕAS

=

1·L·I2·

2

⎝⎛⎜⎜

BVDSS

BVDSS − VDD

⎟⎟⎠⎞

5

2009-09-29

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