2SD951 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SD951

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD951

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)EBO Emitter-base breakdown voltage

IE=500m A;IC=0

5

V

VCEsat Collector-emitter saturation voltage IC=2 .5A;IB=0.8 A

5.0

V

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

IC=2 .5A;IB=0.8 A

VCB=750V;IE=0

VCB=1500V;IE=0

1.5

V

50 μA

1.0 mA

hFE-1

DC current gain

IC=1A ; VCE=5V

8

hFE-2

DC current gain

IC=2.5A ; VCE=10V

3

VF

tf

ts

Diode forward voltage

固IN电C半H导AN体GE SEMICONDUTOR Fall time

Storage time

IF=4A

IC=2.5A;IBend=0.8A;LB=5μH

1.7

0.9

11

V

μs

μs

2

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