2SD835 Ver la hoja de datos (PDF) - Inchange Semiconductor

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2SD835

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD835

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1A; IB=B 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA; IB=B 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= 0.1mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 100mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 10mA

VBE(sat) Base-Emitter Saturation Voltage

IC= 4A; IB=B 10mA

ICBO

Collector Cutoff Current

VCB= 400V; IE=0

IEBO

Emitter Cutoff Current

VEB= 15V; IC=0

hFE

DC Current Gain

IC= 4A; VCE= 1.5V

Switching Times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC = 4A, IB1 =-IB2 = 40mA,

RL = 10Ω;

Pw = 20μs, DutyCycle≤2%

MIN TYP. MAX UNIT

350

V

400

V

400

V

15

V

1.5

V

2.0

V

0.1

mA

100 mA

400

1.0

μs

12.0 μs

6.0

μs

isc Website：www.iscsemi.cn

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