2SD675 Ver la hoja de datos (PDF) - Inchange Semiconductor

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2SD675

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

2SD675

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞

160

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 5mA; IC= 0

5

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 0.6A

2.5

V

VBE(on) Base-Emitter On Voltage

IC= 1A; VCE= 5V

1.5

V

ICBO

Collector Cutoff Current

VCB= 120V; IE= 0

0.1

mA

hFE-1

DC Current Gain

IC= 1A; VCE= 5V

60

200

www.iscsemi.cn hFE-2

DC Current Gain

‹ hFE-1 Classifications

B

C

60-120 100-200

IC= 6A; VCE= 5V

20

isc Website：www.iscsemi.cn

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