2SD675 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SD675

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

2SD675

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 160V(Min)

·High Power Dissipation-

: PC= 100W(Max)@TC=25℃

·Complement to Type 2SB655

APPLICATIONS

·Designed for low frequency power amplifier applications.

www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

160

V

VCEO

Collector-Emitter Voltage

160

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

12

A

ICM

Collector Current-Peak

Collector Power Dissipation

PC

@TC=25℃

TJ

Junction Temperature

20

A

100

W

150

℃

Tstg

Storage Temperature

-55~150 ℃

isc Website：www.iscsemi.cn

Share Link: