INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3657
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
800
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
900
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.4A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 2A; IB=B 0.4A
VCB= 800V; IE= 0
1.5
V
100 μA
www.iscsemi.cn IEBO
Emitter Cutoff Current
hFE
DC Current Gain
Switching times
tr
Rise Time
tstg
Storage Time
VEB= 7V; IC= 0
IC= 1A; VCE= 5V
10
IC= 1A; IB1= -IB2= -0.4A;
RL= 400Ω; VCC≈ 400V
tf
Fall Time
1
mA
1.0 μs
2.5 μs
1.0 μs
hFE-1 Classifications
K
L
M
10-20 15-30 20-40
isc Website:www.iscsemi.cn
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