SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2827
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCE(sat) Collector-emitter saturation voltage IC=4A; IB=0.8A
VBE(sat) Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO
Collector cut-off current
VCB=500V ;IE=0
ICEO
Collector cut-off current
VCE=450V ; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-2
DC current gain
IC=3A ; VCE=2V
fT
Transition frequency
IC=0.5A ; VCE=10V
MIN TYP. MAX UNIT
450
V
6
V
1.0
V
1.5
V
100 µA
100 µA
100 µA
10
20
MHz
2