2SC2480
Zrb IE
120
VCB = 10 V
f = 2 MHz
100
Ta = 25°C
80
GP IE
NF IE
40
12
VCB = 10 V
VCB = 10 V
35
f = 100 MHz
Rg = 50 Ω
10
f = 100 MHz
Rg = 50 kΩ
Ta = 25°C
Ta = 25°C
30
8
25
60
20
6
15
40
4
10
20
0
− 0.1
−1
−10
Emitter current IE (mA)
5
0
− 0.1
−1
−10
−100
Emitter current IE (mA)
2
0
− 0.1
−1
−10
−100
Emitter current IE (mA)
e/ pe) bib gib
c . ty 0
n d ge ed yib = gib + jbib
sta tinu VCB = 10 V
le n −10
a elifecyc , disco −20
IE = −2 mA
n u ct ped f=900MHz
te tin Produuedty −30 −5mA
600
500
four ontin −40
300 200
in n llowing ddisc −50
a o ludes foe, plane −60
c d inc e typ 0
10 20 30 40 50
Input conductance gib (mS)
brb grb
0
− 0.4
yrb = grb + jbrb
VCB = 10 V
200
300
500
− 0.8
600
−1.2
f = 900 MHz
−2 mA
−1.6
IE = −5 mA
−2.0
−2.4
−1.0 − 0.8 − 0.6 − 0.4 − 0.2 0
Reverse transfer conductance grb (mS)
M is/Discontimnuaeintenanc bob gob
e e, 12
D anc typ yob = gob + jbob
n e VCE = 10 V
900
inte nc 10
Ma intena 8
a IE = −2 mA
600
−5 mA
(planed m 6
500
bfb gfb
48
yfb = gfb + jbfb
VCB = 10 V
40
f = 200 MHz
IE = −5 mA
32
300
−2 mA
24
500
600
16
8
900
0
−60 −40 −20 0
20 40
Forward transfer conductance gfb (mS)
4
300
2
f = 200 MHz
0
0 0.4 0.8 1.2 1.6 2.0
Output conductance gob (mS)
SJC00116CED
3