SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1826
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
IC=3A ;IB=0.3A
VCB=80V;IE=0
VEB=6V; IC=0
IC=1A ; VCE=4V
IC=0.5A ; VCE=12V
MIN TYP. MAX UNIT
60
V
80
V
6
V
1.0
V
1.5
V
100 µA
100 µA
40
320
10
MHz
2