2SB1604 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

Número de pieza

componentes Descripción

Fabricante

2SB1604

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SB1604 2SB1604A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2SB1604

2SB1604A

IC=-10mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-0.33A

VBEsat Base-emitter saturation voltage

IC=-10A ;IB=-0.33A

ICBO

Collector cut-off current

VCB=-40V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-0.1A ; VCE=-2V

hFE-2

DC current gain

IC=-3A ; VCE=-2V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-0.5A ; VCE=-10V

Switching times

ton

Turn-on time

tstg

Storage time

IC=-3A; IB1=-IB2=-0.1A

tf

Fall time

MIN TYP. MAX UNIT

-20

V

-40

-0.6

V

-1.5

V

-50

μA

-50

μA

45

90

260

400

pF

100

MHz

0.1

μs

0.5

μs

0.1

μs

‹ hFE-2 Classifications

Q

P

90-180

130-260

2

Share Link: