2SB1188PT Ver la hoja de datos (PDF) - CHENMKO CO., LTD.

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Fabricante

2SB1188PT

SURFACE MOUNT PNP Medium Power Transistor

CHENMKO CO., LTD. 

RATING CHARACTERISTIC CURVES ( 2SB1188PT )

CHARACTERISTICS ( At TA = 25oC unless otherwise noted )

PARAMETERS

CONDITION

Collector-Base Breakdown Voltage

IC=-50uA

Collector-Emitter Breakdown Voltage

IC=-1.0mA

Emitter-Base Breakdown Voltage

IE=-50uA

SYMBOL

BVCBO

BVCEO

BVECO

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

IE=0; VCB=-20V

IC=0; VEB=-4V

VCE=-3V; Note 3

IC=-0.5A

ICBO

IEBO

hFE

Collector-Emitter Saturation Voltage

IC=-2A; IB=-0.2A; Note 3

VCEsat

Output Capacitance

Transition Frequency

IE=ie=0; VCB=-10V;

f=1MHz

CC

IE=-0.5A; VCE=-5.0V;

f=100MHz

fT

Note :

3. Measured ueing pulse current

4. hFE Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390

MIN.

-40

-32

-5

-

-

82

-

-

-

TYPE

-

-

-

-

-

-

-0.5

50

100

MAX.

-

-

-

-1.0

-1.0

390

-0.8

-

-

UNITS

Volts

Volts

Volts

uA

uA

Volts

pF

MHz

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