B1019 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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componentes Descripción

Fabricante

B1019

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A

VBEsat Base-emitter saturation voltage

IC=-4A ;IB=-0.4A

ICBO

Collector cut-off current

VCB=-70V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-1V

hFE-2

DC current gain

IC=-4A ; VCE=-1V

fT

Transition frequency

IC=-1A ; VCE=-4V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

RL=10Ω

IB1=-IB2=-0.3A

VCC=-30V

‹ hFE-1 Classifications

O

Y

70-140

120-240

Product Specification

2SB1019

MIN TYP. MAX UNIT

-50

V

-0.2 -0.4

V

-0.9 -1.2

V

-30 μA

-50 μA

70

240

30

10

MHz

250

pF

0.2

μs

2.5

μs

0.5

μs

2

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