B1019 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

B1019

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1019

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

-50

V

VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A

-0.2 -0.4

V

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=-4A ;IB=-0.4A

VCB=-70V; IE=0

VEB=-5V; IC=0

-0.9 -1.2

V

-30 μA

-50 μA

hFE-1

DC current gain

IC=-1A ; VCE=-1V

70

240

hFE-2

DC current gain

IC=-4A ; VCE=-1V

30

fT

Transition frequency

IC=-1A ; VCE=-4V

10

固I电NC半H导A体NGE SEMICONDUCTOR COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

250

Switching times

ton

Turn-on time

0.2

RL=10Ω

ts

Storage time

IB1=-IB2=-0.3A

2.5

VCC=-30V

MHz

pF

μs

μs

tf

Fall time

0.5

μs

‹ hFE-1 Classifications

O

Y

70-140

120-240

2

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