2SB1011
PC Ta
1.6
Without heat sink
1.2
0.8
0.4
0
0
40
80
120
160
Ambient temperature Ta (°C)
IC VCE
−120
TC=25˚C
−100
–0.9mA
−80
–0.8mA
–0.7mA
IB=–1mA
−60
–0.6mA
–0.5mA
–0.4mA
−40
–0.3mA
–0.2mA
−20
–0.1mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
IC VBE
−120
VCE=–5V
25˚C
−100
TC=75˚C
−80
−60
−40
–25˚C
−20
0
0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0
Base-emitter voltage VBE (V)
−100
−10
VCE(sat) IC
IC/IB=10
−1
− 0.1
TC=75˚C
25˚C
–25˚C
− 0.01
− 0.1
−1
−10
−100
Collector current IC (mA)
hFE IC
240
VCE=–5V
200
Ta=75˚C
160
120
25˚C
–25˚C
80
40
0
− 0.1
−1
−10
−100
Collector current IC (mA)
fT IE
120
VCB=–30V
f=200MHz
TC=25˚C
100
80
60
40
20
0
1
10
100
1 000
Emitter current IE (mA)
Cob VCB
30
IE=0
f=1MHz
TC=25˚C
25
20
15
10
5
0
−1
−10
−100
Collector-base voltage VCB (V)
Sefe operation area
−1 000
Single pulse
TC=25˚C
ICP
−100
IC
t=100ms
t=10ms
t=1s
−10
−1
− 0.1
−1
−10
−100
−1 000
Collector-emitter voltage VCE (V)
2
SJD00036BED