Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA766
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;L=25mH,RBE=5kΩ
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A
VBE-1
Base-emitter saturation voltage
IC=-0.1A ; VCE=-5V
VBE-2
Base-emitter saturation voltage
IC=-0.5A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-60V; IE=0
hFE-1
DC current gain
IC=-0.1A ; VCE=-5V
hFE-2
DC current gain
IC=-0.5A ; VCE=-5V
fT
Transition frequency
IE=0.1A ; VCB=-10V
MIN TYP. MAX UNIT
-150
V
-5
V
-1.0
V
-0.8
V
-1.0
V
-30
μA
35
150
35
15
MHz
2