2PA1774M Ver la hoja de datos (PDF) - Philips Electronics
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2PA1774M Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistor
Product specification
2PA1774M series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter-base cut-off current
DC current gain
2PA1774QM
2PA1774RM
2PA1774SM
collector-emitter saturation voltage
collector capacitance
transition frequency
CONDITIONS
VCB = −30 V; IE = 0
VCB = −30 V; IE = 0; Tj = 150 °C
VEB = −4 V; IC = 0
VCE = −6 V; IC = −1 mA
IC = −50 mA; IB = −5 mA; note 1
IE = ie = 0; VCB = −12 V; f = 1 MHz
VCE = −12 V; IC = −2 mA;
f = 100 MHz
MIN.
−
−
−
120
180
270
−
−
100
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX.
−100
−5
−100
270
390
560
−200
2.2
−
UNIT
nA
µA
nA
mV
pF
MHz
103
handbook, halfpage
(1)
hFE
(2)
(3)
102
MDB663
10
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −6 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.2 DC current gain; typical values.
−1200
handbook, halfpage
VBE
(mV)
−1000
(1)
−800
(2)
−600
−400
(3)
MDB664
−200
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −6 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
2004 Feb 19
4
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