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Número de pieza
componentes Descripción
2N6465 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2N6465
Silicon NPN Power Transistors
Inchange Semiconductor
2N6465 Datasheet PDF : 3 Pages
1
2
3
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6465
2N6466
I
C
=50mA ;I
B
=0
V
CEsat
Collector-emitter saturation voltage I
C
=1.5A; I
B
=0.15A
V
BE
Base-emitter on voltage
I
C
=1.5A ; V
CE
=4V
2N6465 V
CB
=110V; I
E
=0
I
CBO
Collector cut-off current
2N6466 V
CB
=130V; I
E
=0
2N6465 V
CE
= 100V,I
B
=0
I
CEO
Collector cut-off current
2N6466 V
CE
= 120V,I
B
=0
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
h
FE
DC current gain
I
C
=1.5A ; V
CE
=4V
f
T
Transition frequency
I
C
=0.5A ; V
CE
=10V
Product Specification
2N6465 2N6466
MIN TYP. MAX UNIT
100
V
120
1.2
V
1.5
V
10
μ
A
100
μ
A
10
μ
A
15
150
5
MHz
2
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