29LV160TE Ver la hoja de datos (PDF) - Fujitsu

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29LV160TE

FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT

Fujitsu 

MBM29LV160TE/BE-70/90/12

Notes: 1. Address bits A11 to A19 = X = “H” or “L” for all address commands except or Program Address (PA) and

Sector Address (SA).

2. Bus operations are defined in Tables 2 and 3.

3. RA =Address of the memory location to be read.

PA =Address of the memory location to be programmed. Addresses are latched on the falling edge of

the WE pulse.

SA =Address of the sector to be erased. The combination of A19, A18, A17, A16, A15, A14, A13, and A12 will

uniquely select any sector.

4. RD =Data read from location RA during read operation.

PD =Data to be programmed at location PA. Data is latched on the rising edge of WE.

5. SPA =Sector address to be protected. Set sector address (SA) and (A6, A1, A0) = (0, 1, 0).

SD =Sector protection verify data. Output 01H at protected sector addressed and output 00H at

unprotected sector addresses.

6. The system should generate the following address patterns:

Word Mode: 555H or 2AAH to addresses A0 to A10

Byte Mode: AAAH or 555H to addresses A-1 to A10

7. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.

*1: This command is valid while Fast Mode.

*2: This command is valid while RESET = VID.

*3: The valid addresses are A6 to A0. The other addresses are “Don’t care”.

*4: The data “00H” is also acceptable.

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