28F002BX-B Ver la hoja de datos (PDF) - Intel
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28F002BX-B Datasheet PDF : 48 Pages
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28F200BX-T B 28F002BX-T B
Table 1 Bus Operations for WORD-WIDE Mode (BYTE e VIH)
Mode
Notes RP
CE
OE
WE
A9 A0 VPP DQ0–15
Read
12
VIH
VIL
VIL
VIH
X
X
X DOUT
Output Disable
VIH
VIL
VIH
VIH
X
X
X High Z
Standby
VIH
VIH
X
X
X
X
X High Z
Deep Power-Down
9
VIL
X
X
X
X
X
X High Z
Intelligent Identifier (Mfr)
34
VIH
VIL
VIL
VIH VID VIL X 0089H
Intelligent Identifier (Device) 3 4 5 VIH
VIL
VIL
VIH VID VIH X 2274H
2275H
Write
6 7 8 VIH
VIL
VIH
VIL
X
X
X DIN
Table 2 Bus Operations for BYTE-WIDE Mode (BYTE e VIL)
Mode
Notes RP CE OE WE A9 A0 Ab1 VPP DQ0–7 DQ8–14
Read
1 2 3 VIH VIL VIL VIH X X
X
X DOUT High Z
Output Disable
VIH VIL VIH VIH X X X X High Z High Z
Standby
VIH VIH
X
X X X X X High Z High Z
Deep Power-Down
9
VIL
X
X
X X X X X High Z High Z
Intelligent Identifier (Mfr) 4
VIH VIL VIL VIH VID VIL X
X 89H
High Z
Intelligent Identifier
(Device)
4 5 VIH VIL VIL VIH VID VIH X
X 74H
75H
High Z
Write
6 7 8 VIH VIL VIH VIL X X
X
X DIN
High Z
NOTES
1 Refer to DC Characteristics
2 X can be VIL or VIH for control pins and addresses VPPL or VPPH for VPP
3 See DC characteristics for VPPL VPPH VHH VID voltages
4 Manufacturer and Device codes may also be accessed via a CUI write sequence A1 – A17 e X
5 Device ID e 2274H for 28F200BX-T and 2275H for 28F200BX-B
6 Refer to Table 4 for valid DIN during a write operation
7 Command writes for Block Erase or Word Byte Write are only executed when VPP e VPPH
8 To write or erase the boot block hold RP at VHH
9 RP must be at GND g0 2V to meet the 1 2 mA maximum deep power-down current
16
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