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1PS66SB63 Datasheet PDF : 10 Pages
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Philips Semiconductors
1PS66SB63; 1PS79SB63
5 V, 20 mA low Cd Schottky barrier diodes
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VR
continuous reverse voltage
-
IF
continuous forward current
-
Tj
junction temperature
-
Tamb ambient temperature
−65
Tstg
storage temperature
−65
Max
Unit
5
V
20
mA
125
°C
+125 °C
+150 °C
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Rth(j-a)
thermal resistance from in free air
[1]
junction to ambient
SOT666
[2] [3] -
-
700 K/W
SOD523
[4] -
-
450 K/W
[1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[2] Refer to SOT666 standard mounting conditions.
[3] Reflow soldering is the only recommended soldering method.
[4] Refer to SOD523 (SC-79) standard mounting conditions.
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage see Figure 1;
IF = 0.1 mA
IF = 1 mA
IR
reverse current see Figure 2;
VR = 1 V
VR = 5 V
Cd
diode
VR = 0 V; f = 1 MHz;
capacitance
see Figure 3
Ls
series inductance
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Min
[1]
-
-
-
-
-
-
Typ
Max Unit
160
200
mV
240
300
mV
0.4
1
µA
-
50
µA
0.35 0.5
pF
0.6
-
nH
9397 750 13846
Product data sheet
Rev. 02 — 3 December 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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