SCOTTSDALE DIVISION
1N6356 thru 1N6372
or MPT-5 thru MPT-45C
1500 W LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
DESCRIPTION
APPEARANCE
This Transient Voltage Suppressor (TVS) series for 1N6356 thru 1N6372 are
JEDEC registered selections for both unidirectional and bidirectional devices.
The 1N6356 thru 1N6364 are unidirectional and the 1N6365 thru 1N6372 are
bi-directional where they all provide a very low specified clamping factor for
minimal clamping voltages (VC) above their respective breakdown voltages
(VBR) as specified herein. They are most often used in protecting sensitive
components from inductive switching transients or induced secondary
lightning effects as found in lower surge levels of IEC61000-4-5 . They are
also very successful in protecting airborne avionics and electrical systems.
Since their response time is virtually instantaneous, they can also protect
from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
DO-13
(DO-202AA)
FEATURES
APPLICATIONS / BENEFITS
• Unidirectional and bidirectional TVS series for thru-hole
mounting
• Suppresses transients up to 1500 watts @ 10/1000 µs
• tclamping (0 volts to V(BR) min):
Unidirectional – Less than 100 pico seconds.
Bidirectional – Less than 5 nano seconds.
• Working voltage (VWM) range 5 V to 45 V
• Low clamping factor (ratio of actual VC/VBR): 1.33 @
full rated power and 1.20 @ 50% rated power
• Hermetic sealed DO-13 metal package
• Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, JANTXV, and JANS are also available
by adding MQ, MX, MV, MSP prefixes respectively to part
numbers, e.g. MX1N6356, etc.
• Surface mount equivalent packages also available as
SMCJ6356 – SMCJ6372 (consult factory for other
surface mount options)
• Plastic axial-leaded equivalents available in the
1N6373 – 1N6389 series (see separate data sheet)
• Designed to protect Bipolar and MOS Microprocessor
based systems.
• Protection from switching transients and induced RF
• ESD and EFT protection per IEC 61000-4-2 and -4-4
• Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1, 2 & 3 1N6356 to 1N6372
Class 4: 1N6356 to 1N6362
• Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1 & 2: 1N6356 to 1N6372
Class 3: 1N6356 to 1N6362
Class 4: 1N6356 to 1N6358
• Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: 1N6356 to 1N6361
Class 3: 1N6356 to 1N6358
• Inherently radiation hard per Microsemi MicroNote
050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• 1500 Watts for 10/1000 µs with repetition rate of 0.01% or
less* at lead temperature (TL) 25oC (See Figs. 1, 2, & 4)
• Operating & Storage Temperatures: -65o to +175oC
• THERMAL RESISTANCE: 50oC/W junction to lead at
0.375 inches (10 mm) from body or 110 oC/W junction to
ambient when mounted on FR4 PC board with 4 mm2
copper pads (1 oz) and track width 1 mm, length 25 mm
• DC Power Dissipation*: 1 Watt at TL < +125oC 3/8” or 10
mm from body (also see Figure 5)
• Forward surge current: 200 Amps for 8.3ms half-sine
wave at TA = +25oC for unidirectional only (1N6356-6364)
• Solder Temperatures: 260 o C for 10 s (maximum)
• CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
• FINISH: All external metal surfaces are Tin-Lead
plated and solderable per MIL-STD-750 method
2026
• POLARITY: Cathode connected to case and
polarity indicated by diode symbol
• MARKING: Part number and polarity diode symbol
• WEIGHT: 1.4 grams. (Approx)
• TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
• See package dimension on last page
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).
Copyright 2002
11-06-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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