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1EDI40I12AF

1EDI EiceDRIVER™ Compact Single Channel IGBT Gate Driver IC

Infineon Technologies 

5

Electrical Parameters

1EDI EiceDRIVER™ Compact

Separate output variant for IGBT

Electrical Parameters

5.1

Absolute Maximum Ratings

Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of

the integrated circuit. Unless otherwise noted all parameters refer to GND1.

Table 2 Absolute Maximum Ratings

Parameter

Symbol

Values

Min.

Max.

Unit Note /

Test Condition

Power supply output side

VVCC2

-0.3

40

V

1)

Gate driver output

VOUT

VGND2-0.3 VVCC2+0.3 V

–

Positive power supply input side

VVCC1

-0.3

18.0

V

–

Logic input voltages (IN+,IN-)

VLogicIN

-0.3

18.0

V

–

Input to output isolation voltage (GND2)

VISO

-1200

1200

V

Junction temperature

TJ

-40

150

°C

–

Storage temperature

Power dissipation (Input side)

Power dissipation (Output side)

Thermal resistance (Input side)

Thermal resistance (Output side)

TS

-55

PD, IN

–

PD, OUT

–

RTHJA,IN

–

RTHJA,OUT –

150

°C

–

25

mW

2) @TA = 25°C

400

mW

2) @TA = 25°C

145

K/W

2) @TA = 85°C

165

K/W

2) @TA = 85°C

ESD capability

VESD,HBM –

2

kV

Human Body

Model3)

1) With respect to GND2.

2) See Figure 10 for reference layouts for these thermal data. Thermal performance may change significantly with layout and

heat dissipation of components in close proximity.

3) According to EIA/JESD22-A114-C (discharging a 100 pF capacitor through a 1.5 kΩ series resistor).

Preliminary Data Sheet

14

Rev. 1.00, 2013-11-20

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