18N60G-T47-T Ver la hoja de datos (PDF) - Unisonic Technologies
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18N60G-T47-T Datasheet PDF : 4 Pages
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UNISONIC TECHNOLOGIES CO., LTD
18N60
18A,600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 18N60 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9A
* Ultra Low Gate Charge ( Typical 50nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 23pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
18N60L-T3P-T
18N60G-T3P-T
18N60L-T47-T
18N60G-T47-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-3P
TO-247
Pin Assignment
1
2
3
GDS
GDS
Packing
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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