MT28F160A3 Ver la hoja de datos (PDF) - Micron Technology

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componentes Descripción

Fabricante

MT28F160A3

1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY

Micron Technology 

CAPACITANCE

(TA = +25°C; f = 1 MHz)

PARAMETER/CONDITION

Input Capacitance

Output Capacitance

ADVANCE

1 MEG x 16

ENHANCED BOOT BLOCK FLASH MEMORY

SYMBOL

CI

CO

MAX

8

12

UNITS NOTES

pF

pF

READ, STANDBY AND DEEP POWER-DOWN CURRENT DRAIN

(-40°C £ TA £ +85°C; VCC = 2.7V–3.3V)

PARAMETER/CONDITION

READ CURRENT:

VCC = VCC (MAX), VCCQ = VCCQ (MAX)

(CE# = VIL; OE# = VIH; RP# = VIH; f = 5 MHz; Other inputs VIH or VIL)

STANDBY CURRENT: VCC SUPPLY

VCC = VCC (MAX); (CE# = RP# = VCCQ)

DEEP POWER-DOWN CURRENT: VCC SUPPLY

VCC = VCC (MAX); VCCQ = VCCQ (MAX)

(RP# = VIL; Other inputs VCCQ or VSS)

READ CURRENT: VPP SUPPLY

VPP £ VCC

VPP > VCC

DEEP POWER-DOWN CURRENT: VPP SUPPLY

(RP# = VIL; VPP £ VCC)

SYMBOL

ICC1

ICC2

ICC3

IPP1

IPP2

IPP3

TYP

–

1

1

2

50

1

MAX UNITS NOTES

20 mA 1, 2

10 µA

10 µA

±15 µA

200 µA

10 µA

NOTE: 1. ICC is dependent on cycle rates.

2. Automatic power savings (APS) mode reduces ICC1 to standby current level ICC2 for static operation.

1 Meg x 16 Enhanced Boot Block Flash Memory

MT28F160A3_3.p65 – Rev. 3, Pub. 8/01

18

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2001, Micron Technology, Inc.

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