HYB511000BJ-50 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

HYB511000BJ-50

1 M×1-Bit Dynamic RAM Low Power 1 M×1-Bit Dynamic RAM

Infineon Technologies 

HYB 511000BJ/BJL-50/-60/-70

1 M × 1-DRAM

V

RAS

IH

VIL

V

IH

CAS

VIL

V

IH

A0 - A9

VIL

V

IH

WE

VIL

DI

V

IH

(Input) VIL

DO

V

OH

(Output) VOL

tRC

tRAS

tCSH

tRCD

tRSH

tCAS

tASR

tRAD

tASC

tCAH

tRAL

Row

Address

tRAH

Column

Address

tWCS

tCWL

t WP

tWCH

tRWL

tDS

tDH

Valid Data In

Hi Z

“H” or “L”

tRP

tCRP

tASR

.

Row

Address

Write Cycle (Early Write)

Semiconductor Group

44

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