DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

L1N08LE Ver la hoja de datos (PDF) - Intersil

Número de pieza
componentes Descripción
Fabricante
L1N08LE Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
RLP1N08LE
Typical Performance Curves Unless Otherwise Specified (Continued)
1.4
ID = 250µA
1.2
1.0
0.8
0.6
0.4
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 7. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
500
400
300
200
COSS
CRSS
100
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGD
1.2
VGS = VDS
ID = 250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
VGS
+
G
0
VDD
RL
D
VDS
RGS
0
0
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
S
FIGURE 10. SWITCHING TEST CIRCUIT
20
HSTR = 0oC/W
15 1oC/W
2oC/W
10
5oC/W
TJ = 150oC
ILIM = 1.5A
RθJC = 4.17oC/W
FREE AIR RθJC = 80oC/W
5 10oC/W
25oC/W
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 11. DC OPERATION IN CURRENT LIMITING
80
60
DUTY CYCLE = 20%
40
10%
5% 2% 1%
20
50%
MAX PULSE WIDTH = 100ms
TJ = 150oC, ILIM = 1.5A, RθJC = 4.17oC/W
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
NOTE: Heatsink thermal resistance = 2oC/W
FIGURE 12. MAXIMUM VDS vs TA IN CURRENT LIMITING
6-438

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]