50C02CH-TL-E Ver la hoja de datos (PDF) - ON Semiconductor

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50C02CH-TL-E

Bipolar Transistor 50V, 0.5A, Low VCE(sat), NPN Single

ON Semiconductor 

50C02CH

Bipolar Transistor

50V, 0.5A, Low VCE(sat), NPN Single

Features

• Large Current Capacitance

• Low Collector to Emitter Saturation Voltage (Resistance):

RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]

• Ultrasmall Package Facilitates Miniaturization in End Products

• Small ON-Resistance (Ron)

Typical Applications

• Low-Frequency Amplifier

• High Speed Switching

• Small Motor Drive

• Muting Circuit

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2)

Parameter

Symbol

Value

Unit

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

5

V

Collector Current

IC

500 mA

Collector Current (Pulse)

ICP

Collector Dissipation (Note 2)

PC

Junction Temperature

Tj

1.0

A

700 mW

150 °C

Storage Temperature

Tstg

−55 to +150 °C

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

Note 2 : Surface mounted on ceramic substrate(600mm2 × 0.8mm)

www.onsemi.com

ELECTRICAL CONNECTION

3

1 : Base

1

2 : Emitter

3 : Collector

2

3

1

2 CPH3

MARKING

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2016

1

April 2016 - Rev. 2

Publication Order Number :

50C02CH/D

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