GP50B60PD Ver la hoja de datos (PDF) - International Rectifier
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GP50B60PD Datasheet PDF : 10 Pages
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IRGP50B60PD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600 —
—
V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
— 0.61 — V/°C VGE = 0V, IC = 1mA (25°C-125°C)
RG
Internal Gate Resistance
—
1.2
—
Ω 1MHz, Open Collector
— 2.0 2.2
IC = 33A, VGE = 15V
VCE(on)
Collector-to-Emitter Saturation Voltage
—
2.4 2.6
V IC = 50A, VGE = 15V
— 2.6 2.9
IC = 33A, VGE = 15V, TJ = 125°C
— 3.2 3.6
IC = 50A, VGE = 15V, TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0 4.0 5.0 V IC = 250µA
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient
— -7.07 — mV/°C VCE = VGE, IC = 1.0mA
gfe
Forward Transconductance
—
42
—
S VCE = 50V, IC = 33A, PW = 80µs
ICES
Collector-to-Emitter Leakage Current
—
5.0 500 µA VGE = 0V, VCE = 600V
—
1.0
— mA VGE = 0V, VCE = 600V, TJ = 125°C
— 1.3 1.7
IF = 25A, VGE = 0V
VFM
Diode Forward Voltage Drop
—
1.5 2.0
V IF = 50A, VGE = 0V
— 1.3 1.7
IF = 25A, VGE = 0V, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
—
— ±100 nA VGE = ±20V, VCE = 0V
Ref.Fig
4, 5,6,8,9
7,8,9
10
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
— 240 360
IC = 33A
Qgc
Gate-to-Collector Charge (turn-on)
—
41
82 nC VCC = 400V
Qge
Gate-to-Emitter Charge (turn-on)
— 84 130
VGE = 15V
Eon
Turn-On Switching Loss
— 360 590
IC = 33A, VCC = 390V
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
—
—
380
740
420
960
fÃÃ µJ VGE = +15V, RG = 3.3Ω, L = 210µH
TJ = 25°C
td(on)
Turn-On delay time
— 34 44
IC = 33A, VCC = 390V
tr
td(off)
Rise time
Turn-Off delay time
—
—
26
130
36
140
fÃÃ ns VGE = +15V, RG = 3.3Ω, L = 210µH
TJ = 25°C
tf
Fall time
— 43 56
Eon
Turn-On Switching Loss
— 610 880
IC = 33A, VCC = 390V
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
—
—
460 530
1070 1410
f µJ VGE = +15V, RG = 3.3Ω, L = 210µH
TJ = 125°C
td(on)
Turn-On delay time
— 33 43
IC = 33A, VCC = 390V
tr
td(off)
Rise time
Turn-Off delay time
—
26
36 ns VGE = +15V, RG = 3.3Ω, L = 200µH
— 140 160
TJ = 125°CÃfÃÃ
tf
Fall time
— 50 65
Cies
Input Capacitance
— 4750 —
VGE = 0V
Coes
Output Capacitance
— 390 —
VCC = 30V
Cres
Coes eff.
Coes eff. (ER)
Reverse Transfer Capacitance
g Effective Output Capacitance (Time Related)
g Effective Output Capacitance (Energy Related)
—
58
— pF f = 1Mhz
— 280 —
VGE = 0V, VCE = 0V to 480V
— 190 —
TJ = 150°C, IC = 150A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
Rg = 22Ω, VGE = +15V to 0V
trr
Diode Reverse Recovery Time
—
50
75 ns TJ = 25°C IF = 25A, VR = 200V,
— 105 160
TJ = 125°C di/dt = 200A/µs
Qrr
Diode Reverse Recovery Charge
— 112 375 nC TJ = 25°C IF = 25A, VR = 200V,
— 420 4200
TJ = 125°C di/dt = 200A/µs
Irr
Peak Reverse Recovery Current
—
4.5
10
A TJ = 25°C IF = 25A, VR = 200V,
Notes:
— 8.0 15
TJ = 125°C di/dt = 200A/µs
Ref.Fig
17
CT1
CT3
CT3
CT3
11,13
WF1,WF2
CT3
12,14
WF1,WF2
16
15
3
CT2
19
21
19,20,21,22
CT5
RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22 Ω.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
2
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