GP400LSS18 Ver la hoja de datos (PDF) - Dynex Semiconductor
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GP400LSS18 Datasheet PDF : 11 Pages
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GP400LSS18
TYPICAL CHARACTERISTICS
800
Common emitter
Tcase = 25˚C
700
Vge = 20/15/12V
600
Vge = 10V
500
400
300
200
100
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, Vce - (V)
Fig.3 Typical output characteristics
800
Common emitter
Tcase = 125˚C
700
Vge = 20/15/12V
600
Vge = 10V
500
400
300
200
100
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, Vce - (V)
Fig.4 Typical output characteristics
350
Tcase = 25˚C
VGE = ±15V
300 VCE = 900V
250
200
A
150
100
50
0
0
B
C
A: Rg = 13Ω
B: Rg = 6.8Ω
C: Rg = 4.7Ω
50 100 150 200 250 300 350 400
Collector current, IC - (A)
Fig.5 Typical turn-on energy vs collector current
350
Tcase = 125˚C
VGE = ±15V
300 VCE = 900V
A
250
200
B
150
C
100
50
A: Rg = 13Ω
B: Rg = 6.8Ω
C: Rg = 4.7Ω
0
0 50 100 150 200 250 300 350 400
Collector current, IC - (A)
Fig.6 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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