DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BU90R104 Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza
componentes Descripción
Fabricante
BU90R104
ROHM
ROHM Semiconductor ROHM
BU90R104 Datasheet PDF : 22 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
BU90R104
About the Power On Reset
Power on reset is not mandatory for this device.
(The PD pin should be set to high level when power on reset procedure is not used.)
VDD
PD
BU90R104
Datasheet
Figure 10. Terminal connection when power on reset is not used.
However, Power on reset procedure is strongly recommend for internal logic initialization by following two methods.
The method of using CR circuit.
The method of using external specific IC.
It is recommend to do enough examination for target application.
VDD
schottky
barrier diode
VDD
10K
VDD
PD
VT+
220
PD
2.2µF
Internal Reset
Be careful of temperature ofthe capacitor especially over and again.
B characteristic ceramics and function polymer aluminum electrolysis
are recommended.
td
td is approximately equal to 20ms
when the left RC coleus are applied.
Figure 11. Power on reset by external a CR circuit
VDD
VDD
Power on IC
(Open drain output)
VOUT
GND
VDD
220K
VDD
PD
PD
0.1µF
B Characteristic ceramics.
Internal Reset
Detection voltage
VT+
td
Figure 12. Power on reset by specific IC
www.rohm.co.jp
© 2011 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
13/18
TSZ02201-0L2L0H500030-1-2
27.Feb.2015 Rev.002

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]