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ZSH560G Ver la hoja de datos (PDF) - Zetex => Diodes

Número de pieza
componentes Descripción
Fabricante
ZSH560G
Zetex
Zetex => Diodes Zetex
ZSH560G Datasheet PDF : 5 Pages
1 2 3 4 5
ZSH560
ABSOLUTE MAXIMUM RATING
Input Supply Voltage
-1 to 10V
Offstate Output Voltage 10V
Onstate Output
Source Current(Note 1)
Internally limited
Clamp Diode
Forward Current(Note 1)
100mA
Operating Junction
Temperature
150°C
Operating Temperature -40 to 85°C
Storage Temperature
-55 to 150°C
Power Dissipation
TO92
SOT223
SO8
780mW
2W(Note 2)
780mW(Note 2)
TEST CONDITIONS
(Tamb=25°C for typical values, Tamb=-40 to 85°C for min/max values (Note3))
COMPARATOR
PARAMETER
SYMBOL MIN
TYP.
MAX. UNITS
Threshold Voltage
Low state output (Vcc increasing)
VIL
Threshold Voltage
High state output (Vcc decreasing)
VIH
Hysteresis
VH
OUPUT
4.5
4.61
4.7
V
4.5
4.59
4.7
V
0.01
0.02
0.05
V
PARAMETER
SYMBOL MIN
TYP.
MAX. UNITS
Output source saturation:
VOH
(Vcc=4.0V, Isource=8.0mA)
(Vcc=4.0V, Isource=2.0mA)
(Vcc=1.0V, Isource=2µA)
Onstate output source current
(Vcc =4.0V, Output=0V)
Isource
10
Offstate output leakage current
Ioh
(Vcc =5.0V, Output=0V)
Clamp diode forward voltage (If=10mA) Vf
0.6
Propagation delay
Td
(Vin 5V to 4V, Rl=10k, Tamb=25°C)
TOTAL DEVICE
20
0.02
1.2
1.5
VCC-1.3 V
VCC-1.2 V
VCC-0.4 V
50
mA
0.5
µA
1.5
V
µs
PARAMETER
SYMBOL MIN
TYP.
MAX. UNITS
Operating input voltage range
Vcc
1.0 to 6.5
V
Quiescent input current (Vcc=5V)
Iq
135
200
µA
Note:
1. Maximum package power dissipation must be observed.
2. Maximum power dissipation, for the SOT223 and SO8 packages, is calculated assuming
that the device is mounted on a PCB measuring 2 inches square.
3. Low duty cycle pulse techniques are used during test to maintain junction temperatures as
close to ambient as possible.
4-335

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