ZSH330G Ver la hoja de datos (PDF) - Zetex => Diodes

Número de pieza

componentes Descripción

Fabricante

ZSH330G

SUPPLY VOLTAGE MONITOR

Zetex => Diodes 

ZSH330

ABSOLUTE MAXIMUM RATING

Input Supply Voltage

-1 to 10V

Power Dissipation

Offstate Output Voltage 10V

TO92

780mW

Onstate Output

Source Current(Note 1)

Clamp Diode

Forward Current(Note 1)

Internally limited

100mA

SOT223

SO8

2W(Note 2)

780mW(Note 2)

Operating Junction

Temperature

150°C

Operating Temperature -40 to 85°C

Storage Temperature

-55 to 150°C

TEST CONDITIONS

(Tamb=25°C for typical values, Tamb=-40 to 85°C for min/max values (Note3))

COMPARATOR

PARAMETER

SYMBOL MIN

TYP.

MAX. UNITS

Threshold Voltage

Low state output (Vcc increasing)

VIL

Threshold Voltage

High state output (Vcc decreasing)

VIH

Hysteresis

VH

OUPUT

3.01

3.09

3.15

V

3.01

3.07

3.15

V

0.01

0.02

0.05

V

PARAMETER

SYMBOL MIN

TYP.

MAX. UNITS

Output source saturation:

VOH

(Vcc=2.7V, Isource=8.0mA)

(Vcc=2.7V, Isource=2.0mA)

(Vcc=1.0V, Isource=2µA)

Onstate output source current

(Vcc=2.7V, Output=0V)

Isource

10

Offstate output leakage current

Ioh

(Vcc=3.3V, Output=0V)

Clamp diode forward voltage (If=10mA) Vf

0.6

Propagation delay

Td

(Vin 3.3V to 2.7V, Rl=10k, Tamb=25°C)

TOTAL DEVICE

21

0.02

1.2

1.4

VCC-1.3 V

VCC-1.2 V

VCC-0.4 V

50

mA

0.5

µA

1.5

V

µs

PARAMETER

SYMBOL MIN

TYP.

MAX. UNITS

Operating input voltage range

Vcc

1.0 to 6.5

V

Quiescent input current (Vcc=3.3V)

Iq

130

180

µA

Note:

1. Maximum package power dissipation must be observed.

2. Maximum power dissipation, for the SOT223 and SO8 packages, is calculated assuming

that the device is mounted on a PCB measuring 2 inches square.

3. Low duty cycle pulse techniques are used during test to maintain junction temperatures as

close to ambient as possible.

4-330

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