ZSH330G(2003) Ver la hoja de datos (PDF) - Zetex => Diodes
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ZSH330G Datasheet PDF : 5 Pages
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ZSH330
ABSOLUTE MAXIMUM RATING
Input Supply Voltage
-1 to 10V
Power Dissipation
Offstate Output Voltage 10V
TO92
780mW
Onstate Output
Source Current(Note 1)
Internally limited
SOT223
2W(Note 2)
Clamp Diode
Forward Current(Note 1)
100mA
Operating Junction
Temperature
150°C
Operating Temperature -40 to 85°C
Storage Temperature
-55 to 150°C
TEST CONDITIONS
(Tamb=25°C for typical values, Tamb=-40 to 85°C for min/max values (Note3))
COMPARATOR
PARAMETER
SYMBOL MIN
TYP.
MAX. UNITS
Threshold Voltage
Low state output (Vcc increasing)
VIL
Threshold Voltage
High state output (Vcc decreasing)
VIH
Hysteresis
VH
OUPUT
3.01
3.09
3.15
V
3.01
3.07
3.15
V
0.01
0.02
0.05
V
PARAMETER
SYMBOL MIN
TYP.
MAX. UNITS
Output source saturation:
VOH
(Vcc=2.7V, Isource=8.0mA)
(Vcc=2.7V, Isource=2.0mA)
(Vcc=1.0V, Isource=2µA)
Onstate output source current
(Vcc=2.7V, Output=0V)
Isource
10
Offstate output leakage current
Ioh
(Vcc=3.3V, Output=0V)
Clamp diode forward voltage (If=10mA) Vf
0.6
Propagation delay
Td
(Vin 3.3V to 2.7V, Rl=10k, Tamb=25°C)
TOTAL DEVICE
21
0.02
1.2
1.4
VCC-1.3 V
VCC-1.2 V
VCC-0.4 V
50
mA
0.5
µA
1.5
V
µs
PARAMETER
SYMBOL MIN
TYP.
MAX. UNITS
Operating input voltage range
Vcc
1.0 to 6.5
V
Quiescent input current (Vcc=3.3V)
Iq
130
180
µA
Note:
1. Maximum package power dissipation must be observed.
2. Maximum power dissipation for the SOT223 package is calculated assuming that the device
is mounted on a PCB measuring 2 inches square.
3. Low duty cycle pulse techniques are used during test to maintain junction temperatures as
close to ambient as possible.
4-330
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