ZM33164C(2006) Ver la hoja de datos (PDF) - Zetex => Diodes
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ZM33164C Datasheet PDF : 5 Pages
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ZM33164
ABSOLUTE MAXIMUM RATING
Input Supply Voltage
-1 to 12V
Power Dissipation
Offstate Output Voltage 12V
TO92
780mW
Onstate Output
Sink Current(Note 1)
Internally limited
SOT223
2W(Note 2)
Clamp diode
Forward Current(Note 1)
100mA
Operating junction
temperature
150°C
Operating Temperature -40 to 85°C
Storage Temperature
-65 to 150°C
TEST CONDITIONS
(Tamb=25°C for typical values, Tamb=-40 to 85°C for min/max values (Note3))
COMPARATOR
PARAMETER
SYMBOL MIN
TYP.
MAX. UNITS
Threshold Voltage
High state output (Vcc increasing)
VIH
Threshold Voltage
Low state output (Vcc decreasing)
VIL
Hysteresis
VH
OUTPUT
4.15
4.33
4.45
V
4.15
4.27
4.45
V
0.02
0.06
V
Output sink saturation:
(Vcc=4.0V, Isink=8.0mA)
(Vcc=4.0V, Isink=2.0mA)
(Vcc=1.0V, Isink=0.1mA)
Onstate output sink current
(Vcc , Output=4V)
Offstate output leakage current
(Vcc , Output=5V)
Clamp diode forward voltage
(If=10mA)
Propagation delay
(Vin 5V to 4V, Rl=10k, Tamb=25°C)
TOTAL DEVICE
VOL
Isink
10
Ioh
Vf
0.6
Td
0.46
1.0
V
0.15
0.4
V
0.25
V
20
50
mA
0.02
0.5
µA
1.2
1.5
V
2.0
µs
Operating input voltage range
Vcc
1.0 to 10
V
Quiescent input current (Vcc=5V)
Iq
175
260
µA
Note:
1. Maximum package power dissipation must be observed
2. Maximum power dissipation for the SOT223 package is calculated assuming that the device
is mounted on a PCB measuring 2 inches square.
3. Low duty cycle pulse techniques are used during test to maintain junction temperatures as
close to ambient as possible
4-95
Issue 4 - July 2006
© Zetex Semiconductors plc 2006
www.zetex.com
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