VN5010AK-E(2008) Ver la hoja de datos (PDF) - STMicroelectronics

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componentes Descripción

Fabricante

VN5010AK-E
(Rev.:2008)

High side driver with analog current sense for automotive applications

STMicroelectronics 

VN5010AK-E

Electrical specifications

2.2

Electrical characteristics

Values specified in this section are for 8V< VCC< 36V; -40°C< Tj< 150°C, unless otherwise

stated (for each channel).

Table 6.

Symbol

Power section

Parameter

Test conditions

Min. Typ. Max. Unit

VCC

Operating supply

voltage

VUSD

Undervoltage

shutdown

VUSDhyst

Undervoltage

shutdown hysteresis

RON

Vclamp

IS

IL(off)

VF

On state resistance

Clamp voltage

Supply current

Off state output

current

Output - VCC diode

voltage

IOUT= 6A; Tj= 25°C

IOUT= 6A; Tj= 150°C

ICC= 20 mA

Off State; VCC= 13V; Tj= 25°C;

VIN=VOUT=VSENSE=VCSD=0V

VIN=VOUT=0V; VCC= 13V; Tj= 25°C

VIN=VOUT=0V; VCC= 13V; Tj= 125°C

-IOUT= 10A; Tj= 150°C

1. PowerMOS leakage included.

.

4.5 13 36 V

3.5 4.5 V

0.5

V

10 mΩ

20 mΩ

41 46 52 V

2(1) 5(1) µA

0 0.01 3 µA

0

5

0.7 V

Table 7. Switching (VCC=13V)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

td(on)

Turn-On delay time

td(off)

Turn-Off delay time

(dVOUT/dt)on

Turn-On voltage

slope

(dVOUT/dt)off

Turn-Off voltage

slope

WON

WOFF

Switching energy

losses during twon

Switching energy

losses during twoff

RL= 2.6Ω (see Figure 8.)

RL= 2.6Ω (see Figure 8.)

RL= 2.6Ω

RL= 2.6Ω

RL= 2.6Ω (see Figure 8.)

RL= 2.6Ω (see Figure 8.)

35

65

See

Figure 20

See

Figure 22

1.5

0.8

µs

µs

V/ µs

V/ µs

mJ

mJ

9/31

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