S-80723AL Ver la hoja de datos (PDF) - Seiko Instruments Inc
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S-80723AL Datasheet PDF : 42 Pages
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HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
49. S-80763AN-JT-X (Detection voltage : 6.148 to 6.452 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 7.5 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
VDD = 3.6 V
VDD = 4.8 V
Pch (CMOS VDD = 8.4 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
6.148 6.300 6.452
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
1.9
3.6
µA
2
1.0
15.0
V
1
0.23 0.50
mA
3
1.60 3.70
3.18 7.00
4.13 8.56
0.59 0.96
4
±0.81
mV/°C
50. S-80777SN-J8-X (Detection voltage : 7.515 to 7.885 V)
Parameter
Symbol
Conditions
Detection voltage
Hysteresis width
-VDET
VHYS
Current consumption ISS
Operating voltage
VDD
Output current
IOUT
Temperature
characteristic of -
VDET
∆-VDET
∆Ta
VDD = 9.0 V
Nch
VDS = 0.5 V
VDD = 1.2 V
VDD = 2.4 V
VDD = 3.6 V
VDD = 4.8 V
VDD = 6.0 V
Pch (CMOS VDD = 9.6 V
output)
VDS = 0.5 V
Ta=-30°C to 80°C
(Unless otherwise specified : Ta=25°C)
Min. Typ. Max. Unit Test
circuit
7.515 7.700 7.885
V
1
-VDET
-VDET
-VDET
V
1
×0.02 ×0.05 ×0.08
2.2
4.0
µA
2
1.0
15.0
V
1
0.23 0.50
mA
3
1.60 3.70
3.18 7.00
4.13 8.56
4.73 9.60
0.65 1.05
4
±0.99
mV/°C
Test Circuits
(1)
(2)
VDD
R(100 kΩ)*
S-807
OUT
VDD
VDD
V
Series
CRT
A
VDD
S-807
Series
OUT
VSS
VSS
* R is unnecessary for CMOS output products.
(3)
(4)
VDD
VDD
S-807
OUT
V
Series
A
VDD
VDD
S-807
V
Series
V
VDS
A
OUT
VSS
V
VSS
VDS
Figure 8
Seiko Instruments Inc.
23
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